The MOFETs that we use in the lab both have a V threshold voltage of about 2.0V and internal resistance is R = 0.2Ω. The drain current will be limited by the two external Ω source resistors (Rnmos, Rpmos). esign a CMO inverter using a NMO and PMO FET. Also, fill in the truth table with all of the C.OP Bias Point simulation voltage values. Print out your circuit schematic showing voltages for all four input combination add from the view menu node voltage and drian current to display on the schematic. Then simulate your design in LTspice with C.OP Bias Point simulations as you did for the NAN gate. how all work for your design and drawing. Limit the drain current total to 30mA with a drain resistor (Rd). esign an NMO NOR gate using the 2N7000 MOFET the model has Vto = 2.0. Vdd Rd Vin1 Q1 NMO Vin2 Q2 NMO Nmos NAN ATE 2. Print your circuit schematic showing voltages for all four input combination. Observe the output voltage value for each input combination. Then run a C.OP Bias Point simulation (use the added 2N7000 model in LTspice) on your design with the four possible input combinations for Vin1 and Vin2 to verify your gate.
Choose Rd (drain current limit resistor) such that the drain currents of the NMO devices will be about 30mA when the is in a low state. Make a truth table showing the four possible combinations of Vin1 and Vin2 and the outputs. The input logic 1 = 9 volt and ground as a logic 0. For the NMO NAN gate shown below gate, using the 2N7000 MOFET LTspice model such that Vto = 2.0. 1 ECE2274 Pre-Lab for MOFET logic LTspice NAN ate, NOR ate, and CMO Inverter 1.
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